Method for forming conductive line
US6197680A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 1999 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | May 17, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method of forming a conductive line on a semiconductor substrate is described. A conductive layer is formed on the substrate. A patterned photoresist layer is formed on the conductive layer. A first etching step is performed on the conductive layer to define the conductive layer and to form a conductive line. A second etching step is performed on the conductive line to undercut the conductive line so as to make the conductive line have smaller bottom and to increase a distance between neighboring conductive lines. A third etching step is performed to remove residue generated on the substrate during the first and the second etching steps. A dielectric layer is formed to cover the conductive line. A planarization process is performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.