Structure of a contact hole in a semiconductor device and method of manufacturing the same
US6197682A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 1999 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Mar 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a multilayer wiring structure for a semiconductor device which can be designed without sacrificing either a micronization or electric properties, and a manufacturing method of the same. A first wiring layer and a third wiring layer are connected by a lower layer contact plug which fills a lower layer contact hole interposing a silicon nitride film spacer, and an upper layer contact plug which fills an upper layer contact hole interposing a silicon oxide film spacer. A second wiring layer divided into more than two portions by the upper layer contact hole near an upper end of the lower layer contact hole is connected by a ring-shaped conductive film spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.