Method of silicon oxide and silicon glass films deposition
US6197705A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 18, 1999 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Mar 18, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a silicon oxide and silicon glass layers at low temperature using soft power-optimized Plasma-Activated CVD with a TEOS-ozone-oxygen reaction gas mixture (TEOS O.sub.3 /O.sub.2 PACVD) is described. It combines advantages of both low temperature Plasma-Enhanced Chemical Vapor Deposition (PECVD) and TEOS-ozone Sub-Atmospheric Chemical Vapor Deposition (SACVD) and yields a coating of silicon oxide with stable and high deposition rate, no surface sensitivity, good film properties, conformal step coverage and good gap-fill. Key features of the invention's O.sub.3 /O.sub.2 PACVD process are: a plasma is maintain throughout the entire deposition step in a parallel plate type reactor chamber, the precise RF plasma density, ozone concentration in oxygen and the deposition temperature. These features provide the reaction conditions for the proper O.sub.3 /O.sub.2 reaction mechanism that deposits a conformal silicon oxide layer. The process has significant implication for semiconductor device manufacturing involving the deposition of a dielectric over a conducting non-planar surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.