III-V compound semiconductor luminescent device
US6198112A · kind A · utility
16Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1997 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Jun 2, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention provides a III-V compound semiconductor having a laminated superlattice structure in which a first monoatomic layer and a second monoatomic layer are regularly laminated, the first monoatomic layer being formed by laminating 1 atomic layer of a group III atom selected from Al, Ga and In and 1 atomic layer of a group V atom selected from P, As and Sb, the second monoatomic layer being formed by laminating 1 atomic layer of the group III atom and 1 atomic layer of a nitrogen atom, and a semiconductor device using the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.