Shiro Sakai
58Patents
12h-index
48Co-inventors
84Inventor score
Filing activity: Jan 24, 1974 → Jul 3, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4963508A | Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice | Emerging Cross-Sectional Technologies | 133 | Expired |
| US7417259B2 | Light-emitting device having light-emitting elements | Electricity | 93 | Expired |
| US7372066B2 | Gallium nitride compound semiconductor device and manufacturing method | Electricity | 65 | Expired |
| US4928154A | Epitaxial gallium arsenide semiconductor on silicon substrate with gallium phosphide and superlattice intermediate layers | Emerging Cross-Sectional Technologies | 57 | Expired |
| US6884647B2 | Method for roughening semiconductor surface | Electricity | 23 | Expired |
| US6475882B1 | Method for producing GaN-based compound semiconductor and GaN-based compound semiconductor device | Electricity | 21 | Expired |
| US7015511B2 | Gallium nitride-based light emitting device and method for manufacturing the same | Electricity | 16 | Expired |
| US6198112A | III-V compound semiconductor luminescent device | Electricity | 16 | Expired |
| US7067838B1 | Gallium-nitride-based light-emitting apparatus | Electricity | 15 | Expired |
| US7700940B2 | Gallium nitride-based compound semiconductor device | Electricity | 14 | Expired |
| US8026119B2 | Method of fabricating semiconductor substrate and method of fabricating light emitting device | Electricity | 14 | Active |
| US7569861B2 | Light emitting device having light emitting elements | Electricity | 13 | Active |
| US6666921B2 | Chemical vapor deposition apparatus and chemical vapor deposition method | Chemistry; Metallurgy | 12 | Expired |
| US8129729B2 | Light emitting device having light emitting elements and an air bridge line | Electricity | 12 | Active |
| US7646031B2 | Light emitting device having light emitting elements | Electricity | 11 | Active |
| US5446275A | Electron multiplying device having multiple dynode stages encased by a housing | Electricity | 8 | Expired |
| US4496598A | Process for preparing mustard flour | Human Necessities | 8 | Expired |
| US3969329A | Process for producing high molecular weight acrylamide water-soluble polymers by controlling the viscosity of the polymerization reaction medium with a water-miscible organic solvent | Chemistry; Metallurgy | 8 | Expired |
| US7005685B2 | Gallium-nitride-based compound semiconductor device | Electricity | 8 | Expired |
| US8097889B2 | Light emitting device having light emitting elements with a shared electrode | Electricity | 7 | Active |
| US6861270B2 | Method for manufacturing gallium nitride compound semiconductor and light emitting element | Electricity | 7 | Expired |
| US7667237B2 | Light emitting device having light emitting elements | Electricity | 7 | Active |
| US5578891A | Electron multiplier | Electricity | 7 | Expired |
| US7956367B2 | Light-emitting device having light-emitting elements connected in series | Electricity | 7 | Active |
| US8084774B2 | Light emitting device having light emitting elements | Electricity | 6 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.