Ferroelectric element and method of producing the same
US6198119A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 1997 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Mar 11, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ferroelectric element is provided that can be highly densely integrated having a high Pr and a small Ec by using a ferroelectric thin film of the perovskite structure. A large distortion is imparted to the crystalline lattices of a ferroelectric thin film of the perovskite structure by using in combination elements having dissimilar ionic radii for the A-site that constitutes crystalline lattices, for the B-site and for the C-site that produces polarization, in order to obtain a ferroelectric element of a structure in which the ferroelectric thin film exhibiting a high spontaneous polarization and a small coersive electric field is sandwiched by the electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.