Toshihide Nabatame
41Patents
10h-index
59Co-inventors
78Inventor score
Filing activity: Oct 6, 1987 → Aug 23, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6198119A | Ferroelectric element and method of producing the same | Electricity | 56 | Expired |
| US6777248B1 | Dielectric element and manufacturing method therefor | Electricity | 55 | Expired |
| US4848983A | Catalytic coal gasification by utilizing chlorides | Emerging Cross-Sectional Technologies | 47 | Expired |
| US6743739B2 | Fabrication method for semiconductor integrated devices | Electricity | 27 | Expired |
| US5849670A | Thallium group superconducting wire | Emerging Cross-Sectional Technologies | 18 | Expired |
| US7387686B2 | Film formation apparatus | Electricity | 11 | Expired |
| US7586755B2 | Electronic circuit component | Electricity | 11 | Active |
| US6503791B2 | Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device | Electricity | 11 | Expired |
| US5318948A | Oxide superconductor, superconducting wire and coil using the same and method of production thereof | Emerging Cross-Sectional Technologies | 11 | Expired |
| US6992022B2 | Fabrication method for semiconductor integrated devices | Electricity | 10 | Expired |
| US6555429B2 | Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device | Electricity | 9 | Expired |
| US7294905B2 | Thin film capacitor and electronic circuit component | Electricity | 9 | Expired |
| US6548342B1 | Method of producing oxide dielectric element, and memory and semiconductor device using the element | Electricity | 8 | Expired |
| US6483143B2 | Semiconductor device having a capacitor structure including a self-alignment deposition preventing film | Electricity | 7 | Expired |
| US6483167B1 | Semiconductor device and production method thereof | Electricity | 4 | Expired |
| US7259058B2 | Fabricating method of semiconductor integrated circuits | Electricity | 3 | Expired |
| US8207584B2 | Semiconductor device and manufacturing method of the same | Electricity | 3 | Active |
| US9741864B2 | Thin-film transistor and method for manufacturing same | Electricity | 3 | Active |
| US8168547B2 | Manufacturing method of semiconductor device | Electricity | 3 | Active |
| US6521494B2 | Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device | Electricity | 3 | Expired |
| US7482234B2 | Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphere | Electricity | 3 | Expired |
| US8575038B2 | Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant gate oxide film, and transistor having high dielectric constant gate oxide film | Electricity | 3 | Active |
| US7618855B2 | Manufacturing method of semiconductor device | Electricity | 2 | Active |
| US7372112B2 | Semiconductor device, process for producing the same and process for producing metal compound thin film | Electricity | 2 | Expired |
| US7772678B2 | Metallic compound thin film that contains high-k dielectric metal, nitrogen, and oxygen | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.