Semiconductor device having buried boron and carbon regions
US6198157A · kind A · utility
101Cited by
6References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 1998 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Feb 17, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/914
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To improve the gettering performance by ion implanting boron and improves the production yield of the semiconductor device by using an epitaxial wafer of good quality suppressing the occurrence of dislocations. For this purpose, an epitaxial wafer in which an epitaxial layer of about 1 .mu.m is formed to a CZ semiconductor substrate implanted with boron ions which are dopant and carbon ions which are not a dopant is provided, and transistors are formed on the surface of the epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.