Bonding pad and support structure and method for their fabrication
US6198170A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 16, 1999 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Dec 16, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A copper bonding pad is directly supported by a copper via pad structure, the copper via pad structure having substantially the same geometry and dimensions as the copper bonding pad. The combination of the copper bonding pad and the copper via pad structure results in an increase in effective thickness of the copper bonding pad. Due to this effective increase in the bonding pad thickness, the bonding pad is more tolerant to the potential dishing problem caused by the CMP process. Additional metal pad structures and via pad structures are used below the bonding pad. The additional metal pad structures and via pad structures comprise alternating segments of interconnect metal and dielectric fillers, and alternating segments of via metal and dielectric fillers, respectively. The alternating segments of interconnect metal and dielectric fillers and the alternating segments of via metal and dielectric fillers prevent or reduce the potential dishing problem that otherwise exists in damascene and CMP processing. The alternating segments of interconnect metal and dielectric fillers and the alternating segments of via metal and dielectric fillers are arranged such that there are a number o…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.