Electron tube having a semiconductor cathode with lower and higher bandgap layers
US6198210A · kind A · utility
2Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 24, 1998 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Nov 24, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J29/16
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor cathode (11) in a semiconductor structure, in which the sturdiness of the cathode is increased by covering the emitting surface (4) with a layer of a semiconductor material (7) having a larger bandgap than the semiconductor material of the semiconductor cathode. Various measures for increasing the electron-mission efficiency are indicated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.