Method for determining the hot carrier lifetime of a transistor
US6198301A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 1998 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Jul 23, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/14
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides a method for determining a hot carrier lifetime of a transistor. In one embodiment, the method comprises the steps of determining an initial transconductance (g.sub.m1) of a transistor, and then, applying a stress voltage, which does not exceed a maximum breakdown voltage of the transistor, to the transistor to cause a transconductance degradation of the transistor, and then determining a subsequent transconductance (g.sub.m2) of the transistor. A hot carrier lifetime of the transistor can then be determined as a function of g.sub.m1 and g.sub.m2. Thus, the present invention provides a method in which the hot carrier lifetime is determined from sequential transconductance measurements without intervening, transistor characteristic tests that are typically conducted between the transconductance measurements that degrade the sensitivity of the g.sub.m measurement. The present invention provides a method that allows for an accurate determination of the hot carrier lifetime within a very short period of time, and therefore, can be used to monitor the hot carrier lifetime quality of the devices as they are fabricated without substantial increases in produc…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.