Sense amplifier for low voltage memory arrays
US6198681A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 28, 2000 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Feb 28, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/065
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense amplifier is coupled to a memory array comprising a first plurality of cells coupled to a first bit line and a dummy cell coupled to a second bit line. The sense amplifier includes a first source follower comprising a first current sink and a first source follower transistor having a gate coupled to the first bit line and a second source follower comprising a second current sink and a second source follower transistor having a gate coupled to the second bit line. The sense amplifier also includes a first n-channel transistor having a gate coupled to the first bit line and a first p-channel transistor having a gate coupled to the first bit line through the first source follower. The sense amplifier also includes a second n-channel transistor having a gate coupled to the second bit line and a second p-channel transistor having a gate coupled to the second bit line through the second source follower.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.