Method and apparatus for manufacturing semiconductor device
US6199567A · kind A · utility
5Cited by
8References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1996 |
| Grant date | Mar 13, 2001 |
| Priority date | — |
| Expiry date | Dec 23, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a semiconductor device including a capacitor, a refractory metal layer is dry-etched using a resist pattern as a mask, whereby a first electrode pattern formed of refractory metal is provided. Sidewall of the first electrode pattern is cleaned using aqueous solution of a surface active agent. Through this procedure, etching residue formed on the sidewall of the electrode pattern is removed when the electrode pattern of refractory metal is produced through dry etching method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.