Semiconductor eutectic alloy metal (SEAM) technology for fabrication of compliant composite substrates and integration of materials
US6199748A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 1999 |
| Grant date | Mar 13, 2001 |
| Priority date | — |
| Expiry date | Aug 20, 2019 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K20/023
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of semiconductor eutectic alloy metal (SEAM) technology for integration of heterogeneous materials and fabrication of compliant composite substrates takes advantage of eutectic properties of alloys. Sub1 and Sub2 are used to represent the two heterogeneous materials to be bonded or composed into a compliant composite substrate. For the purpose of fabricating compliant composite substrate, the first substrate material (Sub1) combines with the second substrate material (Sub2) to form a composite substrate that controls the stress in the epitaxial layers during cooling. The second substrate material (Sub2) controls the stress in the epitaxial layer grown thereon so that it is compressive during annealing. A joint metal (JM) with a melting point of T.sub.m is chosen to offer variable joint stiffness at different temperatures. JM and Sub1 form a first eutectic alloy at a first eutectic temperature T.sub.eu1 while JM and Sub2 form a second eutectic alloy at a second eutectic temperature T.sub.eu2. T.sub.m1 and T.sub.m2 are the melting points of Sub1 and Sub2, respectively. The following condition should be met: T.sub.m1, T.sub.m2 >T.sub.m >T.sub.eu1, T.sub.eu2. After cleaning of…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.