Nova Crystals, Inc.
6Patents
0Active
6Granted
29Portfolio score
Filing activity: Dec 11, 1998 → Nov 7, 2001
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6329063A | Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates | Emerging Cross-Sectional Technologies | 108 | Expired |
| US6384462B1 | Planar hetero-interface photodetector | Emerging Cross-Sectional Technologies | 58 | Expired |
| US6459716B1 | Integrated surface-emitting laser and modulator device | Electricity | 35 | Expired |
| US6459709B1 | Wavelength-tunable semiconductor laser diode | Electricity | 26 | Expired |
| US6199748A | Semiconductor eutectic alloy metal (SEAM) technology for fabrication of compliant composite substrates and integration of materials | Performing Operations; Transporting | 24 | Expired |
| US6806114B1 | Broadly tunable distributed bragg reflector structure processing | Electricity | 17 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.