Patent · US Expired

Method for fabricating semiconductor devices

US6200734A · kind A · utility

11Cited by
6References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 15, 1998
Grant dateMar 13, 2001
Priority date
Expiry dateJun 15, 2018

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S430/151
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The invention is a method for forming semiconductor devices from a substrate having a non-planar surface. An anti-reflection coating is formed between the substrate and photoresist layer to alleviate the problems caused by non-uniform reflection at the substrate surface during exposure of the photoresist layer. Three-layer and two-layer stacks are described for use with UV and i-line exposure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.