Kurt G. Steiner
36Patents
11h-index
75Co-inventors
78Inventor score
Filing activity: Nov 15, 1991 → Aug 17, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6008123A | Method for using a hardmask to form an opening in a semiconductor substrate | Emerging Cross-Sectional Technologies | 55 | Expired |
| US5200358A | Integrated circuit with planar dielectric layer | Electricity | 51 | Expired |
| US7068139B2 | Inductor formed in an integrated circuit | Emerging Cross-Sectional Technologies | 48 | Expired |
| US5891784A | Transistor fabrication method | Emerging Cross-Sectional Technologies | 37 | Expired |
| US8294331B2 | Acoustic wave guide device and method for minimizing trimming effects and piston mode instabilities | Emerging Cross-Sectional Technologies | 27 | Active |
| US6133618A | Semiconductor device having an anti-reflective layer and a method of manufacture thereof | Electricity | 22 | Expired |
| US6869873B2 | Copper silicide passivation for improved reliability | Electricity | 16 | Expired |
| US6432814B1 | Method of manufacturing an interconnect structure having a passivation layer for preventing subsequent processing reactions | Emerging Cross-Sectional Technologies | 16 | Expired |
| US7126198B2 | Protruding spacers for self-aligned contacts | Electricity | 15 | Expired |
| US6362094B1 | Hydrogenated silicon carbide as a liner for self-aligning contact vias | Electricity | 12 | Expired |
| US7332775B2 | Protruding spacers for self-aligned contacts | Electricity | 11 | Active |
| US8183698B2 | Bond pad support structure for semiconductor device | Electricity | 11 | Active |
| US6200734A | Method for fabricating semiconductor devices | Emerging Cross-Sectional Technologies | 11 | Expired |
| US8319343B2 | Routing under bond pad for the replacement of an interconnect layer | Electricity | 9 | Active |
| US6798043B2 | Structure and method for isolating porous low-k dielectric films | Electricity | 9 | Expired |
| US6576980B1 | Surface treatment anneal of hydrogenated silicon-oxy-carbide dielectric layer | Electricity | 9 | Expired |
| US6879046B2 | Split barrier layer including nitrogen-containing portion and oxygen-containing portion | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6675631B1 | Method for conducting crash tests using a carriage and corresponding device | Physics | 8 | Expired |
| US6548892B1 | Low k dielectric insulator and method of forming semiconductor circuit structures | Electricity | 8 | Expired |
| US7067419B2 | Mask layer and dual damascene interconnect structure in a semiconductor device | Electricity | 7 | Expired |
| US6960836B2 | Reinforced bond pad | Electricity | 6 | Expired |
| US6472307B1 | Methods for improved encapsulation of thick metal features in integrated circuit fabrication | Electricity | 6 | Expired |
| US9331667B2 | Methods, systems, and apparatuses for temperature compensated surface acoustic wave device | Electricity | 5 | Active |
| US5416033A | Integrated circuit and manufacture | Electricity | 5 | Expired |
| US10469050B2 | Guided acoustic wave device | Electricity | 5 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.