Photoresist developer and method
US6200736A · kind A · utility
23Cited by
21References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 2, 2000 |
| Grant date | Mar 13, 2001 |
| Priority date | — |
| Expiry date | Feb 2, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/3021
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An interrupted development, multi-cycle development process, in combination with an aqueous photoresist developer composition enables development of electron-beam exposed novolak-resin based photoresists with resolution of less than 0.20 .mu.m, contrast >5, and dark loss less than 10%. The developer composition of this invention includes a metal alkali, a dialkylalkanolamine adjuvant, a surfactant and a buffer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.