Method of fabricating copper damascene
US6200890A · kind A · utility
12Cited by
2References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 10, 1999 |
| Grant date | Mar 13, 2001 |
| Priority date | — |
| Expiry date | Aug 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76885
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fabrication method for a copper (Cu) damascene, involving etching a part of a dielectric layer after formation of the Cu conducting wires, so that the Cu conducting wires project out from the surface of the dielectric layer. A top barrier layer is formed to prevent Cu electromigration (EM) and current leakage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.