Method for measuring the electrical potential in a semiconductor element
US6201401A · kind A · utility
26Cited by
2References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 23, 1998 |
| Grant date | Mar 13, 2001 |
| Priority date | — |
| Expiry date | Nov 23, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/854
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Measuring an electrical potential in a semiconductor element by applying one or more voltages over the semiconductor element, placing at least one conductor in contact with the semi-conductor element using a scanning proximity microscope while injecting a substantially zero current in the semiconductor element with the conductor, measuring an electrical potential in the conductor while injecting a substantially zero current in the semiconductor element with the conductor, changing the position of the conductor, and repeating the measuring and changing steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.