Semiconductor integrated circuit device, memory module and storage device
US6201733A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1999 |
| Grant date | Mar 13, 2001 |
| Priority date | — |
| Expiry date | Nov 5, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/06
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
To improve the efficiency for repairing a defect of a large-scale integrated circuit, a semiconductor integrated circuit device is formed of, a central processing unit (10), an electrically reprogrammable nonvolatile memory (11) and a volatile memory (12, 13) while sharing a data bus (16), and utilizes stored information of the nonvolatile memory to repair a defect of the volatile memory. This volatile memory includes a volatile storage circuit (12AR, 13AR) for latching repair information for repairing a defective normal memory cell with a redundancy memory cell. The nonvolatile memory reads out the repair information from itself in response to an instruction to initialize the semiconductor integrated circuit device. In response to the initializing instruction, the volatile storage circuit latches the repair information from the nonvolatile memory. No fuse program circuit is not needed for the detect repair, and a defect which occurs after a burn-in can be newly repaired so that the new defect can be repaired, even after the packaging over a circuit substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.