Atomic layer deposition with nitrate containing precursors
US6203613A · kind A · utility
1,154Cited by
4References
53Claims
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Key dates
| Filing date | Oct 19, 1999 |
| Grant date | Mar 20, 2001 |
| Priority date | — |
| Expiry date | Oct 19, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76846
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metal nitrate-containing precursor compounds are employed in atomic layer deposition processes to form metal-containing films, e.g. metal, metal oxide, and metal nitride, which films exhibit an atomically abrupt interface and an excellent uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.