Method of gap filling
US6203863A · kind A · utility
269Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 1998 |
| Grant date | Mar 20, 2001 |
| Priority date | — |
| Expiry date | Nov 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of gap filling by using HDPCVD. On a substrate having a conductive structure, a first oxide layer is formed to protect the conductive structure. While forming the first oxide layer no bias is applied. An argon flow with a high speed of etching/deposition is provided to form a second oxide layer. While forming the second oxide layer a triangular or trapezium profile is formed due to an etching effect to the corner. An argon flow with a low speed of etching/deposition is provided to form a third oxide layer. The gap filling is completed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.