Method for forming multi-layered liner on sidewall of node contact opening
US6204107A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 1998 |
| Grant date | Mar 20, 2001 |
| Priority date | — |
| Expiry date | Dec 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a multi-layered liner on the sidewalls of a node contact opening includes the steps of providing a substrate having a dielectric layer thereon. The dielectric layer further includes a node contact opening that exposes a portion of the substrate. A first liner layer is then formed on the sidewalls of the node contact opening. Next, a second liner layer is formed over the first liner layer such that the first liner layer and the second liner layer together form a dual-layered liner. The first liner layer in contact with the dielectric layer has good insulation capacity while the second liner layer has good etch-resisting property.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.