Process for forming a high density semiconductor device

US6204112A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Ashima B. Chakravarti · Hopewell Junction, US
• Satya N. Chakravarti · Hopewell Junction, US
• James G. Ryan · Sandy Hook, US

Key dates

• Filing date: Jan 22, 1999
• Grant date: Mar 20, 2001
• Expiry date: Jan 22, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/038

Abstract

A method for forming an integrated circuit device, and the product thereby produced, are disclosed. The disclosed method includes the steps of obtaining a substrate with a patterned gate conductor and cap insulator, forming a dielectric masking layer having at least one opening, and, using the opening in the dielectric masking layer as a mask, forming a trench capacitor which is self-aligned to the cap insulator edge. The method is particularly useful for a producing a DRAM device having a dense array region with self-aligned deep trench storage capacitors connected by buried straps.