Method for etching
US6204193A · kind A · utility
7Cited by
5References
1Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 14, 1999 |
| Grant date | Mar 20, 2001 |
| Priority date | — |
| Expiry date | Apr 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a laminated film comprising at least two layers of a semiconductor device, the method comprising: a step, in which etching of an upper layer is started with a first etching gas, and the etching of the upper layer is stopped before a lower layer is exposed; and a step, in which a remainder of the upper layer and the lower layer is etched with a second etching gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.