Post deposition treatment of dielectric films for interface control
US6204203A · kind A · utility
198Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 14, 1998 |
| Grant date | Mar 20, 2001 |
| Priority date | — |
| Expiry date | Oct 14, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a metal oxide dielectric film. According to the present invention an amorphous metal oxide dielectric film is deposited over a substrate utilizing a metal organic precursor. The substrate is then heated in an inert ambient to convert the amorphous metal oxide dielectric to a polycrystalline metal oxide dielectric. The polycrystalline metal dielectric is then heated in a oxygen containing ambients.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.