Using H2anneal to improve the electrical characteristics of gate oxide
US6204205A · kind A · utility
30Cited by
7References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1999 |
| Grant date | Mar 20, 2001 |
| Priority date | — |
| Expiry date | Jul 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new method is provided to anneal the gate oxide after the gate oxide has been grown. The first embodiment of the invention teaches a two step anneal, a first anneal using H.sub.2 followed by a second anneal using N.sub.2. The second embodiment of the invention teaches a one step anneal using H.sub.2 mixed with N.sub.2. The third embodiment of the invention teaches a one step anneal using pure H.sub.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.