Method and apparatus for fabricating semiconductor
US6206969A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 1997 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | May 9, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/566
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor fabrication apparatus for evaporating a material in a growth chamber by a molecular beam epitaxy technique to fabricate a semiconductor is provided. The apparatus includes: an ultra-high vacuum chamber including a liquid nitrogen cold trap therein, the ultra-high vacuum chamber being connected to the growth chamber via a valve; a first evacuation system including an ultra-high vacuum evacuation system, the first evacuation system being connected to the ultra-high vacuum chamber; and a second evacuation system including an evacuation system capable of conducting an evacuation operation even in a low vacuum condition, the second evacuation system being connected to the liquid nitrogen cold trap. The first evacuation system and the second evacuation system independently conduct the respective evacuation operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.