Layer-structured oxide and process of producing the same
US6207082A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1997 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Apr 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02269
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A layer-structured oxide exhibiting a paraelectric characteristic and a layer-structured oxide having a preferable remanent polarization, and a process of producing the same. A layer-structured oxide containing Bi, a first component Me, a second component R, and O is produced by heating raw materials at a high temperature of about 1400.degree. C. for several ten minutes by a self-flux method using Bi.sub.2 O.sub.3 as a flux. The first component Me is composed of at least one kind selected from a group consisting of Sr, Pb, Ba, and Ca, and the second component R is composed of at least one kind selected from a group consisting of Nb and Ta. The composition formula of the oxide is expressed by Bi.sub.2-a Me.sub.1+b R.sub.2 O.sub.9+c where a, b, and c are values in ranges of 0<a<2, 0<b.ltoreq.0.4, and -0.3.ltoreq.c.ltoreq.1.4. The layer-structured oxide exhibits a paraelectric characteristic or a ferroelectric characteristic at a composition in a specific range out of the stoichiometric composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.