Mask with attenuating phase-shift and opaque regions
US6207333A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 1999 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Jul 29, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/32
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating an attenuating phase shift photolithographic mask which will reduce the formation of side-lobes adjacent to large structures in the kerf regions on the patterned wafer. These structures are typically much larger in size than device nominal, and this method may be applied to either one axis or both axes of the kerf structure depending on it's susceptibility to form side-lobes. A substantially defect free optical lithography mask having partially transmissive attenuating phase-shift regions, transmissive clear regions, and more opaque than partially transmissive regions is fabricated by first depositing an attenuating phase-shifting layer on the top surface of a transmissive substrate followed by deposition of a more opaque than partially transmissive layer on top of the partially transmissive attenuating phase-shifting layer. Next an image transfer layer is deposited on top of the more opaque than partially transmissive layer. A first photolithographic step is performed in order to pattern the image transfer layer. The image transfer layer may then be inspected and repaired. The pattern in the image transfer layer is then transferred to both the more opaque t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.