Positive photoresist composition and process for forming contact hole
US6207340A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2000 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Mar 31, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0226
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to the present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.