Low temperature thin film transistor fabrication
US6207472A · kind A · utility
86Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 1999 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Mar 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/615
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention broadens the range of materials and processes that are available for Thin Film Transistor (TFT) devices by providing in the device structure an organic semiconductor layer that is in contact with an inorganic mixed oxide gate insulator involving room temperature processing at up to 150 degrees C. A TFT of the invention has a pentacene semiconductor layer in contact with a barium zirconate titanate gate oxide layer formed on a polycarbonate transparent substrate employing at least one of the techniques of sputtering, evaporation and laser ablation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.