Self-aligned trenched-channel lateral-current-flow transistor
US6207511A · kind A · utility
7Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2000 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Jun 8, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6213
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A transistor (100) having a strip channel or channels (108) in which the current flow in is the lateral direction between source (110) and drain (112). The gate (116) is located on the sidewalls and, if desired, the top of the strip channel (108). In a preferred embodiment of the invention, a disposable gate process is used that allows the source (110) and drain (112) regions to be self-aligned to the gate (116).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.