Method for forming a T-shaped plug having increased contact area
US6207545A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 30, 1998 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Nov 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a T-shaped contact plug is disclosed. A first insulating layer is formed atop of a substrate. A second insulating layer is then formed atop of the first insulating layer. The first and second insulating layers are patterned and etched to form a contact opening to the substrate. A portion of the second insulating layer surrounding the contact opening is removed. Next, a barrier metal layer is formed along the walls of the contact opening and atop the second insulating layer. Then a conducting layer is formed into the contact opening and atop the barrier metal layer. Finally, a portion of the first conducting layer and barrier metal layer atop the second insulating layer is removed. This leaves a plug formed of the remaining portion of the conducting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.