Selective oxidation methods for metal oxide deposition on metals in capacitor fabrication
US6207561A · kind A · utility
31Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 1999 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Jul 29, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/957
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A cost-effective method for fabricating MIM capacitors (120). After metal (106) deposition, the metal oxide (108) is formed using an oxidation chemistry that includes CO2 and H2. The CO2/H2 gas ratio is controlled for selective oxidation. Thus, the metal (106) is effectively protected from oxidation due to the existence of both H2 and CO2 as strong reduction reagent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.