Method for deposition of high stress silicon dioxide using silane based dual frequency PECVD process
US6207590A · kind A · utility
3Cited by
3References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 19, 1999 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Nov 19, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a silicon dioxide layer in a process chamber is disclosed. The process comprises: flowing silane into the process chamber; flowing N.sub.2 O into the process chamber; generating a RF signal at a first predetermined power at a first frequency; and generating a RF signal at a second predetermined power at a second frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.