Method and equipment for manufacturing semiconductor device
US6207591A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1998 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Nov 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon wafer is heated from an initial pre-heating temperature (T.sub.0) up to a first annealing temperature (T.sub.1) by a rapid heating up step using an IR lamp. A first annealing is executed at the first annealing temperature (T.sub.1). Successively, while the silicon wafer is maintained at a second annealing temperature (T.sub.2) lower than the first annealing temperature (T.sub.1), a second annealing step is executed by a resistive heating furnace. A thermal oxidation can be executed as the second annealing step. To do so, an equipment for manufacturing a semiconductor device in the present invention is provided with: a heating device having an IR lamp and a resistive heater; an annealing tube having on a surface thereof a plurality of concave portions in such a way that each bottom approaches a central line; a resistive heater wrapped around this annealing tube; and an IR lamp movably inserted into and pulled out from the concave portion from the external. A IR lamp moving unit for moving the IR lamp is connected to the IR lamp. A wafer loader for mounting a plurality of wafers can be carried into and from the annealing tube. The first annealing step using the IR lamp at t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.