Inventor · Yokohama, JP

Nobutoshi Aoki

49Patents
10h-index
54Co-inventors
78Inventor score

Filing activity: May 29, 1998 → Feb 14, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US6930360B2 Semiconductor device and manufacturing method of the same Electricity 130 Expired
US7186598B2 Semiconductor device and manufacturing method of the same Electricity 119 Expired
US7391068B2 Semiconductor device Electricity 24 Active
US6207591A Method and equipment for manufacturing semiconductor device Electricity 22 Expired
US6744104B1 Semiconductor integrated circuit including insulated gate field effect transistor and method of manufacturing the same Electricity 18 Expired
US9030881B2 Nonvolatile semiconductor memory device Physics 15 Active
US7989856B2 Fin transistor Electricity 13 Active
US8035199B2 Semiconductor device and method for manufacturing the same Electricity 13 Active
US8633535B2 Nonvolatile semiconductor memory Electricity 12 Active
US7459748B2 Semiconductor memory device Physics 11 Active
US6516237B1 System for and method of preparing manufacturing process specifications and production control system Emerging Cross-Sectional Technologies 9 Expired
US7539055B2 Non-volatile semiconductor memory and method for controlling a non-volatile semiconductor memory Electricity 7 Active
US8809931B2 Nonvolatile semiconductor memory device Electricity 7 Active
US8354706B2 Semiconductor memory device Electricity 7 Active
US7393748B2 Method of fabricating a semiconductor memory device Electricity 7 Active
US6697771B1 Semiconductor device manufacturing system and the method thereof Electricity 5 Expired
US9379164B2 Integrated circuit device Electricity 5 Active
US9136468B2 Nonvolatile semiconductor memory device Physics 5 Active
US7923788B2 Semiconductor device Electricity 4 Active
US7528447B2 Non-volatile semiconductor memory and method for controlling a non-volatile semiconductor memory Electricity 4 Expired
US7456096B2 Method of manufacturing silicide layer for semiconductor device Electricity 4 Active
US10276590B2 Method for manufacturing a semiconductor device including a vertical channel between stacked electrode layers and an insulating layer Electricity 3 Active
US8134203B2 Nonvolatile semiconductor memory device Electricity 3 Active
US9825100B2 Nonvolatile semiconductor memory device Electricity 3 Active
US8420467B2 Semiconductor device and method for manufacturing the same Electricity 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.