Product and process for forming a semiconductor structure on a host substrate
US6210479A · kind A · utility
56Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 1999 |
| Grant date | Apr 3, 2001 |
| Priority date | — |
| Expiry date | Feb 26, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/094
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for cheaply fabricating a substantially single crystal or a polycrystalline semiconductor structure on a host substrate. The process begins by depositing a layer of wide band gap nitride material 10, such as gallium nitride, aluminum nitride and/or indium nitride, on a sapphire substrate 11. The semiconductor structure 14 is then grown on the nitride layer. Next, the host substrate 15 is attached with a bonding agent to an exposed surface area of the semiconductor structure 14. The sapphire substrate is lifted off by irradiation in which nitrogen is dissociated from the nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.