Method for forming a perovskite thin film using a sputtering method with a fully oxidized perovskite target
US6210545A · kind A · utility
3Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 23, 1999 |
| Grant date | Apr 3, 2001 |
| Priority date | — |
| Expiry date | Nov 23, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/088
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An inventive method for forming a thin film comprises the steps of preparing a sputter-target of a material which is fully oxidized and crystallized to a perovskite structure, sputter-depositing a thin film on top of a sample with the target in an inert gas atmosphere, and annealing the thin film in non-oxygen ambient. With the use of such a target, it is possible to reduce the negative ion effect during the sputter deposition and to eliminate the presence of oxygen during the annealing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.