Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof

US6210987A · kind A · utility

Assignee

• KULITE SEMICONDUCTOR PRODUCTS, INC. · US

Inventors

• Anthony D. Kurtz · Englewood, US
• Jonathan E. Spanier · Yeadon, US

Key dates

• Filing date: Apr 5, 1999
• Grant date: Apr 3, 2001
• Expiry date: Apr 5, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/835

Abstract

A multilayered LED structure which has an active light-emitting layer of porous silicon carbide and a sequence of layers of porous silicon carbide underneath which serves as a quarter-wavelength multilayer mirror. The result is the electroluminescent emission of spectrally narrow visible light in the deep blue to UV range, in a highly directed pattern. The deep, intense blue luminescence is accomplished via the appropriate preparation and passivation of a single porous silicon carbide layer, followed by the deposition of a transparent, semiconducting layer, such as ITO (In.sub.2 O.sub.3) or ZnO.