Method for device editing
US6211527A · kind A · utility
78Cited by
20References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 11, 1999 |
| Grant date | Apr 3, 2001 |
| Priority date | — |
| Expiry date | Feb 11, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31745
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making connections to conductors buried under dielectrics layers using a focused ion beam and an etch-assisting gas is described. The method uses a halogenated hydrocarbon, such as 2, 2, 2-trifluoroacetamide, to enhance etching of the dielectric while attenuating etching of the conductor once expose. The method thereby allows a via to be milled to contact the conductor without substantial etching and degrading the conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.