Resurf LDMOS device with deep drain region

US6211552A · kind A · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Taylor R. Efland · Richardson, US
• Sameer Pendharkar · Allen, US
• Dan M. Mosher · Plano, US
• Peter Chia-cu Mei · Plano, US

Key dates

• Filing date: May 27, 1999
• Grant date: Apr 3, 2001
• Expiry date: May 27, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A RESURF LDMOS transistor (32) has a drain region including a first region (24) and a deep drain buffer region (34) surrounding the first region. The first region is more heavily doped than the deep drain buffer region. The deep drain buffer region improves the robustness of the transistor.