Optical method for the characterization of the electrical properties of semiconductors and insulating films
US6211961A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 30, 1999 |
| Grant date | Apr 3, 2001 |
| Priority date | — |
| Expiry date | Aug 30, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/1717
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for characterizing a sample includes the steps of (a) providing a semiconductor material; (b) applying at least one of an electric field, a pulsed or cw light source, a change in temperature and/or a change in pump pulse intensity to the semiconductor material; (c) absorbing pump light pulses in a portion of the semiconductor material and measuring changes in optical constants as indicated by probe light pulses applied at some time t following the absorption of the pump light pulses; and (e) associating a measured change in the optical constants with at least one of a surface charge, dopant concentration, trap density, or minority carrier lifetime.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.