Method and apparatus for anisotropic etching of substrates

US6214161A · kind A · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Volker Becker · Marxzell, DE
• Franz Laermer · Stuttgart, DE
• Andrea Schilp · Schwäbisch Gmünd, DE

Key dates

• Filing date: Aug 6, 1998
• Grant date: Apr 10, 2001
• Expiry date: Aug 6, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/3345
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

Method, apparatus and plasma processing system for anisotropic etching of a substrate using a plasma. A high-frequency alternating electromagnetic field is generated using an inductive coupled plasma source, and a reactive gas or reactive gas mixture is exposed to that high-frequency alternating electromagnetic field in order to generate the plasma. The electrically charged particles of the plasma are accelerated onto the substrate. An aperture having at least one effective surface for electron-ion recombination is inserted between the plasma source and the substrate.