Apparatus for manufacturing semiconductor device, method of manufacturing capacitor of semiconductor device thereby, and resultant capacitor
US6214689A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 1999 |
| Grant date | Apr 10, 2001 |
| Priority date | — |
| Expiry date | Mar 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/712
Abstract
An apparatus for manufacturing a semiconductor device and a method of manufacturing a capacitor of a semiconductor device prevents the decrease of the surface area of a hemispherical grained (HSG) film formed on a lower electrode of the capacitor of the semiconductor device due to the abrasion of the HSG film during a subsequent cleaning process. The method of manufacturing a capacitor includes: forming a lower electrode of a capacitor of a semiconductor device over a specific structure formed on a semiconductor substrate; forming a hemispherical grained (HSG) film on an exposed surface of the lower electrode; stabilizing the HSG film in order to prevent the decrease of the surface area of the HSG film due to the abrasion of the HSG film during subsequent cleaning. The apparatus for manufacturing a semiconductor device includes a first process chamber for formation of the HSG film on a lower electrode of a capacitor of the semiconductor device and a second process chamber which stabilizes the HSG film. The resultant capacitor includes a lower electrode formed over a semiconductor substrate, a stabilized HSG film over the lower electrode, a dielectric layer over the stabilized HSG f…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.