Method for forming an isolation structure in a substrate
US6214699A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 30, 1999 |
| Grant date | Apr 10, 2001 |
| Priority date | — |
| Expiry date | Mar 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to form an isolation structure in a substrate, a blocking layer (13, 14) is fabricated over the substrate (12), after which portions of the blocking layer and the substrate are removed at an isolation region (22). A dielectric layer (26) is then deposited over the blocking layer and the isolation region. Thereafter, a chemical-mechanical polishing process is carried out on the dielectric layer, so as to remove a substantial portion of the dielectric layer disposed above an upper surface of the blocking layer. A non-patterned etch is then carried out on the dielectric layer, in order to remove a remaining portion of the dielectric layer disposed above the upper surface of the blocking layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.