Methods of forming semiconductor substrates using wafer bonding techniques and intermediate substrates formed thereby
US6214702A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 26, 1999 |
| Grant date | Apr 10, 2001 |
| Priority date | — |
| Expiry date | Mar 26, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/976
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming semiconductor substrates include the steps of bonding a first semiconductor substrate to a second semiconductor substrate. The first semiconductor substrate has a first adhesion layer thereon extending opposite a first surface thereof and a first diffusion barrier layer extending between the first adhesion layer and the first surface. The second semiconductor substrate has a second adhesion layer thereon. The first diffusion barrier layer prevents impurities from within the first adhesion layer from diffusing directly into the first semiconductor substrate during subsequent thermal treatment steps (e.g., annealing). A second diffusion barrier layer is then formed to encapsulate the bonded wafers and the adhesion layers and diffusion barrier layer therebetween. The second diffusion barrier layer prevents impurities from within the adhesion layers from out-diffusing (from the lateral edges of the adhesion layers) during the subsequent thermal treatment steps (e.g., annealing steps). The second diffusion barrier layer may comprise silicon nitride or silicon oxynitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.