Fluorine barrier layer between conductor and insulator for degradation prevention
US6214730A · kind A · utility
34Cited by
16References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 25, 1999 |
| Grant date | Apr 10, 2001 |
| Priority date | — |
| Expiry date | Feb 25, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/963
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method of improving the resistance of a metal against degradation from exposure to fluorine released from a fluorine-containing material by forming a fluorine-barrier layer between the insulator material and the metal. The invention is especially useful in improving corrosion and poisoning resistance of metallurgy, such as aluminum metallurgy, in semiconductor structures. The invention also covers integrated circuit structures made by this method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.